Electronic Processes in Non-Crystalline Materials by Nevill F. Mott, Edward Arthur Davis PDF
By Nevill F. Mott, Edward Arthur Davis
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Additional resources for Electronic Processes in Non-Crystalline Materials
Another uncertainty in the interpretation is the possible temperature dependence of z/ph (Chapter 3). Also l/Tl/4 behaviour should not be thought necessarily to imply variable-range hopping; in fact other explanations have been given (cf. Alder, Flora, and Sentura 1973) based on percolation theory. We think that the clearest evidence for 1/T1/4 behaviour comes from low-temperature measurements in impurity bands, where the nature of the disorder and of the electron-phonon interaction is well understood, and in two dimensions (1/T1/3 behaviour) from conduction at a Si/SiO2 interface.
11. Potential energies in conduction and valence bands with long-range fluctuations due to (a) electrostatic charges and (b) fluctuations in density. conductivity can be calculated by considering the fraction PI of the volume available to an electron of energy E and the fraction P2 in connected channels. Schematically the two volumes will appear as functions of E as in Fig. 12; Pi(E) represents the total volume available for the electron of energy E. Curve P2, representing the volume available for conduction, has been shownt to behave like (E—Ep) 1'6 near the percolation edge.
Many experiments on this material and on silicon are reviewed in Chapter 7, including the transition to T1/3 behaviour observed by Pollak et al. (1973) and Knotek (1975a,£) for films of amorphous silicon and germanium of thickness less than the hopping distance R. This form of conductivity is via 'states in the gap' which are probably due to divacancies, dangling bonds, or other defects of the nature of which there is some uncertainty; the creation of defects by bombardment with heavy ions increases this form of conduction (Olley 1973, Stuke 1976).