Download e-book for kindle: Low-Noise Wide-Band Amplifiers in Bipolar and CMOS by Zhong Yuan Chang, Willy M. C. Sansen (auth.)

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By Zhong Yuan Chang, Willy M. C. Sansen (auth.)

Analog circuit layout has grown in value simply because such a lot of circuits can't be learned with electronic concepts. Examples are receiver front-ends, particle detector circuits, and so on. truly, all circuits which require excessive precision, excessive pace and coffee energy intake desire analog ideas. excessive precision additionally wishes low noise. a lot has been written already on low noise layout and optimization for low noise. little or no is accessible even though if the resource isn't resistive yet capacitive or inductive as is the case with antennas or semiconductor detectors. This e-book presents layout options for all these optimization. This booklet is therefore meant to start with for engineers on senior or graduate point who've already designed their first operational amplifiers and wish to head additional. it's specifically for engineers who don't want only a circuit however the top circuit. layout thoughts are provided that bring about the simplest functionality inside of a undeniable expertise. additionally, this is often performed for all vital applied sciences comparable to bipolar, CMOS and BiCMOS. Secondly, this ebook is meant for engineers who are looking to comprehend what they're doing. The layout options are meant to supply perception. during this manner, the layout suggestions can simply be prolonged to different circuits besides. additionally, the layout innovations shape a primary step in the direction of layout automation. Thirdly, this ebook is meant for analog layout engineers who are looking to get to grips with either bipolar and CMOS applied sciences and who are looking to study extra approximately which transistor to settle on in BiCMOS.

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Extra resources for Low-Noise Wide-Band Amplifiers in Bipolar and CMOS Technologies

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87, Sept. 27] C. T. Sah, "Theory of low frequency generation noise in junction gate field effect transistors," Proc. IEEE, Vol. 28] S. Christensson et ai, "Low frequency noise in MOS transistors-I," Solid-State electronics, Vol. 29] Z. Celik and T. Y. Hsing, "Study of 1/f noise in N-MOSFET's: linear region," IEEE Trans. Electron Devices, Vol. 12, Dec. 2797-2802 Chapter 2. 30] K. K. Thornber, "Resistive-gate-induced thennal noise in IGFET's," IEEE J. Solid-State Circuits, Vol. 4, Aug. 31] R. P. Jindal, "Noise associated with distributed resistance of MOSFET gate structures in integrated circuits," IEEE Trans.

41]. However, it has been found that only limited experimental results fitted this model which means that other mechanisms could be dominant. 32 Chapter 2. 7). 43]. 44]. In view of this model it is logical to assume that the I/f noise associated with generation-recombination in the vicinity of the bulk E-B junction should be affected by the total base resistance, while the I/fnoise due to surface recombination is only effected by the extrinsic resistance. g where ifl is surface recombination 1/f noise and iJz is generation-recombination 1/f noise and rbj and rbe are the intrinsic and extrinsic base resistance, respectively.

41 Noise in Integrated Circllits - Mechanisms and Models Therefore, it can be concluded that the noise performance of voltage amplifiers with a resistive source can always be made to be dominated by the resistive source itself. 56) where mCillRs term is the result of the equivalent input current noise generator of the MOS input. Since the noise source of the core amplifier is in series with the signal source, its noise contribution can be minimized by minimizing the noise source itself. b is simulated with SPICE.

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